IXFA20N85XHV

Specifications

Maximum Drain Source Voltage V

850

Package Length

10.2(Max)

Maximum Drain Source Resistance Mohm

330@10V

Tab

Tab

Typical Fall Time Ns

20

Maximum Operating Temperature C

150

Supplier Package

TO-263HV

Typical Gate Charge Vgs Nc

63@10V

Hts

8541.29.00.95

Channel Mode

Enhancement

Minimum Operating Temperature

- 55 C

Qg Gate Charge

63 nC

Maks. Çalışma Sıcaklığı

+ 150 C

Parça Durumu

Active

Minimum Operating Temperature C

-55

Seri

X-Class

Rds On Drainsource Resistance

330 mOhms

Vgs Th Gatesource Threshold Voltage

3.5 V

Typical Turnon Delay Time Ns

20

Mounting

Surface Mount

Configuration

Single

Technology

Si

Montaj Stili

SMD/SMT

Typical Input Capacitance Vds Pf

1660@25V

Eccn Us

EAR99

Number Of Channels

1 Channel

Kılıf / Paket

TO-263-3

Maximum Continuous Drain Current A

20

Vds Drainsource Breakdown Voltage

850 V

Typical Turnoff Delay Time Ns

44

Pd Power Dissipation

540 W

Maximum Power Dissipation Mw

540000

Pin Sayısı

3

Package Height

4.7(Max)

Typical Gate Charge10v Nc

63

Category

Power MOSFET

Maximum Gate Source Voltage V

±30

Channel Type

N

Vgs Gatesource Voltage

- 30 V, + 30 V

Transistor Polarity

N-Channel