IXFA130N10T2-TRL

Specifications

Ppap

No

Pcb Changed

2

Maximum Gate Source Leakage Current Na

200

Eu Rohs

Compliant

Typical Rise Time Ns

38

Id Continuous Drain Current

130 A

Typical Gate Charge10v Nc

130

Maximum Power Dissipation Mw

360000

Pin Sayısı

3

Package Height

4.83(Max)

Vgs Gatesource Voltage

- 20 V, + 20 V

Transistor Polarity

N-Channel

Kılıf / Paket

TO-263-3

Pd Power Dissipation

360 W

Vds Drainsource Breakdown Voltage

100 V

Maximum Idss Ua

10

Maximum Gate Threshold Voltage V

4.5

Vgs Th Gatesource Threshold Voltage

2 V

Minimum Operating Temperature C

-55

Ambalaj

Tape and Reel

Parça Durumu

Active

Mounting

Surface Mount

Typical Turnon Delay Time Ns

16

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature C

175

Maximum Drain Source Resistance Mohm

10.1@10V

Tab

Tab

Typical Gate Charge Vgs Nc

130@10V

Package Width

9.4(Max)

Number Of Elements Per Chip

1

Lead Shape

Gull-wing

Category

Power MOSFET

Automotive

No

Maximum Gate Source Voltage V

±20

Channel Type

N

Maximum Continuous Drain Current A

130

Process Technology

HiperFET

Standard Package Name

TO-263

Typical Turnoff Delay Time Ns

24

Montaj Stili

SMD/SMT