IXFA130N10T2

Specifications

Channel Mode

Enhancement

Maximum Operating Temperature C

175

Typical Fall Time Ns

25

Tab

Tab

Maximum Drain Source Voltage V

100

Package Length

10.41(Max)

Maximum Drain Source Resistance Mohm

10.1@10V

Typical Gate Charge Vgs Nc

130@10V

Supplier Package

D2PAK

Eccn Us

EAR99

Typical Input Capacitance Vds Pf

6600@25V

Maximum Gate Threshold Voltage V

4.5

Parça Durumu

Active

Minimum Operating Temperature C

-55

Mounting

Surface Mount

Configuration

Single

Typical Turnon Delay Time Ns

16

Category

Power MOSFET

Typical Gate Charge10v Nc

130

Lead Shape

Gull-wing

Package Height

4.83(Max)

Maximum Power Dissipation Mw

360000

Pin Sayısı

3

Automotive

No

Maximum Gate Source Voltage V

±20

Process Technology

HiperFET

Maximum Continuous Drain Current A

130

Standard Package Name

TO-263

Typical Turnoff Delay Time Ns

24

Maximum Idss Ua

10

Pcb Changed

2

Ppap

No

Eu Rohs

Compliant

Maximum Gate Source Leakage Current Na

200

Package Width

9.4(Max)

Typical Rise Time Ns

38

Number Of Elements Per Chip

1