IXFA130N10T

Specifications

Channel Mode

Enhancement

Maximum Operating Temperature C

175

Maximum Drain Source Resistance Mohm

9.1@10V

Package Length

10.29(Max)

Maximum Drain Source Voltage V

100

Tab

Tab

Typical Fall Time Ns

28

Typical Gate Charge Vgs Nc

104@10V

Supplier Package

TO-263AA

Montaj Stili

SMD/SMT

Number Of Channels

1 Channel

Typical Input Capacitance Vds Pf

5080@25V

Parça Durumu

Active

Minimum Operating Temperature C

-55

Rds On Drainsource Resistance

9.1 mOhms

Configuration

Single

Mounting

Surface Mount

Technology

Si

Typical Turnon Delay Time Ns

30

Typical Gate Charge10v Nc

104

Category

Power MOSFET

Pin Sayısı

3

Maximum Power Dissipation Mw

360000

Package Height

4.83(Max)

Automotive

Unknown

Transistor Polarity

N-Channel

Channel Type

N

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

130

Process Technology

HiperFET

Kılıf / Paket

TO-263-3

Vds Drainsource Breakdown Voltage

100 V

Typical Turnoff Delay Time Ns

44

Ppap

Unknown

Pcb Changed

2

Package Width

9.65(Max)

Eu Rohs

Compliant

Typical Rise Time Ns

47

Number Of Elements Per Chip

1

Id Continuous Drain Current

130 A