IXFA12N65X2-TRL

Specifications

Typical Input Capacitance Vds Pf

1134@25V

Number Of Channels

1 Channel

Eccn Us

EAR99

Montaj Stili

SMD/SMT

Typical Turnon Delay Time Ns

27

Technology

Si

Mounting

Surface Mount

Configuration

Single

Seri

HiPerFET

Rds On Drainsource Resistance

310 mOhms

Ambalaj

Tape and Reel

Parça Durumu

Active

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

3 V

Channel Mode

Enhancement

Minimum Operating Temperature

- 55 C

Maks. Çalışma Sıcaklığı

+ 150 C

Qg Gate Charge

18.5 nC

Supplier Package

D2PAK

Typical Gate Charge Vgs Nc

18.5@10V

Typical Fall Time Ns

12

Tab

Tab

Maximum Drain Source Voltage V

650

Package Length

10.41(Max)

Maximum Drain Source Resistance Mohm

310@10V

Maximum Operating Temperature C

150

Pcb Changed

2

Ppap

No

Id Continuous Drain Current

12 A

Number Of Elements Per Chip

1

Typical Rise Time Ns

26

Eu Rohs

Compliant

Package Width

9.4(Max)

Maximum Gate Source Voltage V

±30

Channel Type

N

Vgs Gatesource Voltage

- 30 V, + 30 V

Transistor Polarity

N-Channel

Automotive

No

Package Height

4.7(Max)

Maximum Power Dissipation Mw

180000