IXFA12N50P-TRL

Specifications

Typical Input Capacitance Vds Pf

1830@25V

Number Of Channels

1 Channel

Eccn Us

EAR99

Montaj Stili

SMD/SMT

Technology

Si

Configuration

Single

Rds On Drainsource Resistance

500 mOhms

Seri

POLAR

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Qg Gate Charge

29 nC

Supplier Package

D2PAK

Typical Fall Time Ns

20

Maximum Drain Source Voltage V

500

Package Length

10.41(Max)

Number Of Elements Per Chip

1

Package Width

9.65(Max)

Maximum Gate Source Voltage V

±30

Channel Type

N

Automotive

No

Category

Power MOSFET

Typical Turnoff Delay Time Ns

65

Process Technology

HiperFET

Maximum Continuous Drain Current A

12

Typical Turnon Delay Time Ns

22

Mounting

Surface Mount

Ambalaj

Tape and Reel

Minimum Operating Temperature C

-55

Parça Durumu

Active

Vgs Th Gatesource Threshold Voltage

3 V

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

29@10V

Tab

Tab

Maximum Drain Source Resistance Mohm

500@10V

Maximum Operating Temperature C

150

Pcb Changed

2

Ppap

No

Id Continuous Drain Current

12 A

Typical Rise Time Ns

27

Eu Rohs

Compliant