IXFA110N15T2

Specifications

Automotive

No

Maximum Gate Source Voltage V

±20

Channel Type

N

Category

Power MOSFET

Lead Shape

Gull-wing

Standard Package Name

TO-263

Typical Turnoff Delay Time Ns

33

Maximum Continuous Drain Current A

110

Number Of Elements Per Chip

1

Package Width

9.4(Max)

Maks. Çalışma Sıcaklığı

+ 175 C

Qg Gate Charge

150 nC

Channel Mode

Enhancement

Hts

8541.29.00.95

Supplier Package

D2PAK

Typical Fall Time Ns

18

Maximum Drain Source Voltage V

150

Package Length

10.41(Max)

Number Of Channels

1 Channel

Eccn Us

EAR99

Typical Input Capacitance Vds Pf

8600@25V

Montaj Stili

SMD/SMT

Technology

Si

Configuration

Single

Rds On Drainsource Resistance

11 mOhms

Seri

IXFA110N15

Transistor Polarity

N-Channel

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Gate Charge10v Nc

150

Package Height

4.83(Max)

Pin Sayısı

3

Maximum Power Dissipation Mw

480000

Pd Power Dissipation

480 W

Vds Drainsource Breakdown Voltage

150 V

Kılıf / Paket

TO-263-3

Pcb Changed

2

Ppap

No

Typical Rise Time Ns

16

Id Continuous Drain Current

110 A

Eu Rohs

Compliant