IXFA10N60P

Specifications

Eu Rohs

Compliant with Exemption

Maximum Gate Source Leakage Current Na

100

Typical Rise Time Ns

27

Typical Gate To Drain Charge Nc

10

Typical Reverse Recovery Charge Nc

320

Pcb Changed

2

Ppap

No

Typical Output Capacitance Pf

160

Operating Junction Temperature C

150

Maximum Idss Ua

25

Maximum Positive Gate Source Voltage V

30

Package Height

4.83(Max)

Pin Sayısı

3

Maximum Power Dissipation Mw

200000

Typical Gate Charge10v Nc

32

Minimum Operating Temperature C

-55

Parça Durumu

Active

Typical Turnon Delay Time Ns

23

Mounting

Surface Mount

Maximum Gate Threshold Voltage V

5.5

Tab

Tab

Maximum Drain Source Resistance Mohm

740@10V

Maximum Operating Temperature C

150

Typical Reverse Recovery Time Ns

120

Typical Gate Charge Vgs Nc

32@10V

Maximum Pulsed Drain Current Tc25c A

25

Package Width

9.4(Max)

Number Of Elements Per Chip

1

Typical Gate Plateau Voltage V

5.9

Process Technology

HiperFET

Maximum Continuous Drain Current A

10

Maximum Diode Forward Voltage V

1.5

Typical Turnoff Delay Time Ns

65

Standard Package Name

TO-263

Typical Gate To Source Charge Nc

12

Category

Power MOSFET

Lead Shape

Gull-wing

Minimum Gate Threshold Voltage V

3

Maximum Gate Source Voltage V

±30

Channel Type

N