Volume pricing
- 1+ pcs$4.26
- 10+ pcs$4.02
- 100+ pcs$3.79
- 500+ pcs$3.58
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rise Time
- 70ns
- Maximum Operating Temperature C
- 150
- Temel Parça No
- IXD*30N120
- Reach Svhc
- No SVHC
- Tab
- Tab
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current Collector Pulsed Icm
- 60A
- Turn On Time
- 170 ns
- Power Dissipation
- 200W
- Yayın Yılı
- 2004
- Gate Charge
- 120nC
- Giriş Tipi
- Standard
- Polarity
- NPN
- Mounting
- Through Hole
- Collector Emitter Voltage Vceo
- 1.2kV
- Collectoremitter Saturation Voltage
- 2.4V
- Montaj Tipi
- Through Hole
- Maximum Gate Emitter Leakage Current Ua
- 0.5
- Parça Durumu
- Active
- Ambalaj
- Tube
- Minimum Operating Temperature C
- -55
- Typical Collector Emitter Saturation Voltage V
- 2.4
- Maximum Gate Emitter Voltage V
- ±20
- Igbt Type
- NPT
- Collectoremitter Breakdown Voltage
- 1.2kV
- Maximum Continuous Collector Current A
- 50
- Transistor Application
- POWER CONTROL
- Kılıf / Paket
- ISOPLUS247™
- Terminal Sayısı
- 3
- Additional Feature
- HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY
- Reverse Recovery Time
- 40ns
- Max Power Dissipation
- 200W
- Package Height
- 21.34(Max)
- Maximum Power Dissipation Mw
- 200
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Maximum Collectoremitter Voltage V
- 1200
- ECCN Kodu
- EAR99
- Element Configuration
- Single
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