IXDH35N60BD1

Specifications

Current Collector Pulsed Icm

70A

Turn On Time

75 ns

Gate Charge

120nC

Yayın Yılı

2000

Giriş Tipi

Standard

Maximum Operating Temperature C

150

Temel Parça No

IXD*35N60

Tab

Tab

Igbt Type

NPT

Maximum Gate Emitter Voltage V

±20

Typical Collector Emitter Saturation Voltage V

2.2

Collectoremitter Breakdown Voltage

600V

Maximum Continuous Collector Current A

60

Mounting

Through Hole

Collector Emitter Voltage Vceo

600V

Collectoremitter Saturation Voltage

2.1V

Montaj Tipi

Through Hole

Maximum Gate Emitter Leakage Current Ua

0.5

Ambalaj

Tube

Minimum Operating Temperature C

-55

Parça Durumu

Obsolete

Terminal Sayısı

3

Additional Feature

HIGH SPEED

Reverse Recovery Time

40ns

Max Power Dissipation

250W

Package Height

21.46(Max)

Maximum Power Dissipation Mw

250

Pin Sayısı

3

Transistor Element Material

SILICON

Svhc

Yes

Transistor Application

MOTOR CONTROL

Weight

6.500007g

Kılıf / Paket

TO-3P-3 Full Pack

Pcb Changed

3

Test Conditions

300V, 35A, 10 Ω, 15V

Ppap

No

Kurşunsuz Kodu

yes

Maximum Collectoremitter Voltage V

600

Element Configuration

Single

Gateemitter Voltagemax

20V