IXBH10N170

Specifications

Transistor Element Material

SILICON

Number Of Elements

1

Weight

6.500007g

Vceon Max Vge Ic

3.8V @ 15V, 10A

Max Collector Current

20A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Collector Pulsed Icm

40A

Yayın Yılı

2003

Power Dissipation

140W

Montaj

Through Hole

Test Conditions

1360V, 10A, 56 Ω, 15V

Collectoremitter Saturation Voltage

3.4V

Transistor Application

POWER CONTROL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Qualification Status

Not Qualified

Svhc

Yes

Kılıf / Paket

TO-247-3

Package Length

16.26(Max)

Ambalaj

Tube

Maximum Gate Emitter Voltage V

±20

Power Max

140W

Gateemitter Thr Voltagemax

5V

Configuration

Single

Collector Emitter Voltage Vceo

1.7kV

Svhc Exceeds Threshold

Yes

Continuous Collector Current

20A

Maximum Gate Emitter Leakage Current Ua

0.1

Maximum Operating Temperature C

150

Terminal Kaplaması

Matte Tin (Sn)

Typical Collector Emitter Saturation Voltage V

3.4

Case Connection

COLLECTOR

Eu Rohs

Compliant with Exemption

Maximum Continuous Collector Current A

20

Maximum Collectoremitter Voltage V

1700

Element Configuration

Single

Pin Sayısı

3

Jedec95 Code

TO-247AD

Switching Energy

6mJ (off)

Channel Type

N

Minimum Operating Temperature C

-55