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Specifications
- Typical Collector Emitter Saturation Voltage V
- 1.8
- Maximum Gate Emitter Leakage Current Ua
- 0.5
- Maximum Operating Temperature C
- 125
- Terminal Kaplaması
- TIN SILVER COPPER
- Collector Current Dc
- 58(A)
- Collector Emitter Voltage Vceo
- 1.2kV
- Configuration
- Single
- Yükseklik
- 21.34mm
- Gateemitter Thr Voltagemax
- 6.5V
- Gate To Emitter Voltage Max
- ±20(V)
- Maximum Gate Emitter Voltage V
- ±20
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Kılıf / Paket
- ISOPLUS247™
- Package Length
- 16.13(Max)
- Uzunluk
- 16.13mm
- Qualification Status
- Not Qualified
- Collectoremitter Saturation Voltage
- 2.1V
- Test Conditions
- 600V, 35A, 27 Ω, 15V
- Genişlik
- 5.21mm
- Transistor Application
- POWER CONTROL
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- ECCN Kodu
- EAR99
- Rad Hardened
- No
- Yayın Yılı
- 2010
- Montaj
- Through Hole
- Power Dissipation
- 195W
- Max Collector Current
- 58A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vceon Max Vge Ic
- 2.1V @ 15V, 35A
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Gate Charge
- 106nC
- Fabrika Tedarik Süresi
- 28 Weeks
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Operating Temperature Max
- 125C
- Supplier Package
- ISOPLUS 247
- Collectoremitter Breakdown Voltage
- 1.2kV
- Turn On Time
- 110 ns
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