Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- ECCN Kodu
- EAR99
- Terminal Pozisyonu
- SINGLE
- Maximum Drain Source Resistance Mohm
- 5.8@10V
- Package Height
- 21.34(Max)
- Package Width
- 5.21(Max)
- Continuous Drain Current Id
- 120A
- Mounting
- Through Hole
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj
- Through Hole
- Typical Rise Time Ns
- 18
- Supplier Package
- ISOPLUS I4-PAK
- Fet Feature
- Standard
- Pin Sayısı
- 5
- Drainsource On Resistancemax
- 0.0058Ohm
- Ppap
- No
- Eccn Us
- EAR99
- Maximum Idss Ua
- 25
- Maximum Continuous Drain Current A
- 120
- Typical Input Capacitance Vds Pf
- 10500@25V
- Seri
- HiPerFET™, TrenchT2™
- Eu Rohs
- Compliant
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Voltage Vdss
- 75V
- Input Capacitance Ciss Max Vds
- 10500pF @ 25V
- Transistor Element Material
- SILICON
- Typical Turnon Delay Time Ns
- 23
- Maximum Gate Source Leakage Current Na
- 200
- Number Of Elements
- 2
- Radyasyon Dayanımı
- No
- Vgsth Max Id
- 4V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Maximum Operating Temperature C
- 175
- Rds On Max Id Vgs
- 5.8m Ω @ 100A, 10V
- Pcb Changed
- 5
- Automotive
- No
- Case Connection
- ISOLATED
- Package Length
- 20.29(Max)
- Maximum Power Dissipation Mw
- 170000
- Maximum Drain Source Voltage V
- 75
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