Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 5
- Turn Off Timenom Toff
- 330 ns
- Polaritychannel Type
- N-CHANNEL
- Pcb Changed
- 5
- Collector Emitter Voltage Vceo Max
- 600 V
- Montaj Stili
- Through Hole
- Switching Energy
- 1mJ (on), 1.4mJ (off)
- Maximum Gate Emitter Leakage Current Ua
- 0.2
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 32 Weeks
- Turn On Delay Time
- 50 ns
- JESD-609 Kodu
- e1
- Pd Power Dissipation
- 200 W
- Pin Sayısı
- 5
- Gate Charge
- 120nC
- Minimum Operating Temperature C
- -55
- Giriş Tipi
- Standard
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Element Configuration
- Single
- Channel Type
- N
- Seri
- FID60-06D
- Package Length
- 19.91
- Igbt Type
- NPT
- Gateemitter Voltagemax
- 20V
- Yayın Yılı
- 2011
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation
- 200W
- Standard Package Name
- ISOPLUS I4-PAC
- Max Power Dissipation
- 200W
- Maximum Gate Emitter Voltage V
- ±20
- Kurşunsuz Kodu
- yes
- Ppap
- No
- Mounting
- Through Hole
- Kılıf / Paket
- ISOPLUS i4-PAC-5
- Turn Off Delay Time
- 300 ns
- Additional Feature
- HIGH RELIABILITY
- Montaj
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Supplier Package
- ISOPLUS I4-PAC
- Typical Collector Emitter Saturation Voltage V
- 1.6
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