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C3 ChipZentronix
TC58NVG2S0HBAI6

Kioxia America, Inc.

TC58NVG2S0HBAI6

Memory

RoHS: Compliant

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Specifications

Fonksiyon Sayısı
1
RoHS Durumu
RoHS Compliant
Write Cycle Time Word Page
25ns
Ambalaj
Tray
Programming Voltage
3.3V
Besleme Gerilimi
3.3V
Memory Interface
Parallel
Operating Mode
ASYNCHRONOUS
Besleme Gerilimi
2.7V~3.6V
Memory Format
FLASH
Yüzey Montaj
YES
Montaj Tipi
Surface Mount
Parça Durumu
Active
Organization
512MX8
Supply Voltagemax Vsup
3.6V
Genişlik
6.5mm
Terminal Pozisyonu
BOTTOM
Terminal Sayısı
67
Uzunluk
8mm
Memory Density
4294967296 bit
Terminal Adımı
0.8mm
Memory Size
4Gb 512M x 8
Çalışma Sıcaklığı
-40°C~85°C TA
Kılıf / Paket
67-VFBGA
Nem Hassasiyeti (MSL)
3 (168 Hours)
Memory Width
8
Supply Voltagemin Vsup
2.7V
Maks. Oturma Yüksekliği
1mm
Memory Types
Non-Volatile
Jesd30 Code
R-PBGA-B67

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