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C3 ChipZentronix
TC58BVG0S3HTAI0

Kioxia America, Inc.

TC58BVG0S3HTAI0

Memory

RoHS: Compliant

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Compliant

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Specifications

Memory Interface
Parallel
Memory Format
FLASH
Operating Mode
ASYNCHRONOUS
Besleme Gerilimi
2.7V~3.6V
Write Cycle Time Word Page
25ns
Ambalaj
Tray
Fonksiyon Sayısı
1
RoHS Durumu
RoHS Compliant
Besleme Gerilimi
3.3V
Programming Voltage
3.3V
Çalışma Sıcaklığı
-40°C~85°C TA
Memory Size
1Gb 128M x 8
Terminal Adımı
0.5mm
Memory Types
Non-Volatile
Maks. Oturma Yüksekliği
1.2mm
Supply Voltagemin Vsup
2.7V
Jesd30 Code
R-PDSO-G48
Nem Hassasiyeti (MSL)
3 (168 Hours)
Kılıf / Paket
48-TFSOP (0.724, 18.40mm Width)
Memory Width
8
Genişlik
12mm
Organization
128MX8
Supply Voltagemax Vsup
3.6V
Montaj Tipi
Surface Mount
Yüzey Montaj
YES
Parça Durumu
Active
Memory Density
1073741824 bit
Terminal Pozisyonu
DUAL
Uzunluk
18.4mm
Terminal Sayısı
48
Seri
Benand™

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