KHB4D0N80F2

Specifications

Case Connection

ISOLATED

Avalanche Energy Rating Eas

460 mJ

Yüzey Montaj

NO

Transistor Element Material

SILICON

Turnoff Timemax Toff

388 ns

Power Dissipationmax Abs

43 W

Ihs Manufacturer

KEC CORP

Operating Temperaturemax

150 °C

Drainsource On Resistancemax

3.6 Ω

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Turnon Timemax Ton

198 ns

Jedec95 Code

TO-220AB

Drain Currentmax Id

4 A

Configuration

SINGLE WITH BUILT-IN DIODE

Feedback Capmax Crss

12 pF

Polaritychannel Type

N-CHANNEL

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

16 A

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Ds Breakdown Voltagemin

800 V

Transistor Application

SWITCHING

Package Style

FLANGE MOUNT

Jesd30 Code

R-PSFM-T3

REACH Uyumluluk Kodu

unknown

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Part Life Cycle Code

Obsolete

Terminal Formu

THROUGH-HOLE

Number Of Terminals

3

Package Description

,