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IXZR18N50

IXYS-RF

IXZR18N50

RF MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Terminal Kaplaması
TIN SILVER COPPER
Qualification Status
Not Qualified
REACH Uyumluluk Kodu
compliant
Frekans
65MHz
Gain
23dB
Transistor Element Material
SILICON
Jesd30 Code
R-PSIP-T3
Kurşunsuz Kodu
yes
Current Rating Amps
19A
RoHS Durumu
RoHS Compliant
Operating Temperature Max
175°C
Ambalaj
Tube
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
SWITCHING
Seri
Z-MOS™
Transistor Type
N-Channel
Power Dissipationmax Abs
350W
Terminal Pozisyonu
SINGLE
Fabrika Tedarik Süresi
10 Weeks
Case Connection
ISOLATED
Terminal Formu
THROUGH-HOLE
Configuration
SINGLE WITH BUILT-IN DIODE
Parça Durumu
Obsolete
Drain Currentmax Abs Id
19A
Operating Mode
ENHANCEMENT MODE
Kılıf / Paket
TO-247-3
Yüzey Montaj
NO
Yayın Yılı
2009
JESD-609 Kodu
e1
Number Of Elements
1
Ds Breakdown Voltagemin
500V
Power Output
350W
Nominal Gerilim
500V
Terminal Sayısı
3
Pin Sayısı
3
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED

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