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IXZR16N60

IXYS-RF

IXZR16N60

RF MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Configuration
SINGLE WITH BUILT-IN DIODE
Parça Durumu
Active
Drain Currentmax Abs Id
18A
Operating Mode
ENHANCEMENT MODE
Kılıf / Paket
TO-247-3
Fabrika Tedarik Süresi
10 Weeks
Case Connection
ISOLATED
Terminal Formu
THROUGH-HOLE
JESD-609 Kodu
e1
Yüzey Montaj
NO
Yayın Yılı
2009
Ds Breakdown Voltagemin
600V
Power Output
350W
Nominal Gerilim
600V
Number Of Elements
1
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Terminal Sayısı
3
Pin Sayısı
3
Qualification Status
Not Qualified
Frekans
65MHz
Gain
23dB
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Terminal Kaplaması
TIN SILVER COPPER
Transistor Element Material
SILICON
Jesd30 Code
R-PSIP-T3
Kurşunsuz Kodu
yes
Current Rating Amps
18A
RoHS Durumu
ROHS3 Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Voltage Test
100V
Operating Temperature Max
175°C
Ambalaj
Tube
Power Dissipationmax Abs
350W
Terminal Pozisyonu
SINGLE
Transistor Application
SWITCHING
Seri
Z-MOS™
Transistor Type
N-Channel

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