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IXZ308N120

IXYS-RF

IXZ308N120

RF MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Reach Svhc
No SVHC
RoHS Durumu
RoHS Compliant
Transistor Element Material
SILICON
Kurşunsuz Kodu
yes
Pin Sayısı
6
Gain
23dB
Frekans
65MHz
Qualification Status
Not Qualified
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Pozisyonu
DUAL
Transistor Type
N-Channel
Seri
Z-MOS™
Transistor Application
SWITCHING
Voltage Test
100V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ambalaj
Tube
Drain To Source Resistance
2.1Ohm
ECCN Kodu
EAR99
Yayın Yılı
2004
Yüzey Montaj
YES
Continuous Drain Current Id
8A
Kılıf / Paket
6-SMD, Flat Lead Exposed Pad
Drain To Source Voltage Vdss
1.2kV
Operating Mode
ENHANCEMENT MODE
Parça Durumu
Obsolete
Drain Currentmax Abs Id
8A
Configuration
SINGLE
Case Connection
ISOLATED
Fabrika Tedarik Süresi
10 Weeks
Rise Time
5ns
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Maks. Çalışma Sıcaklığı
175°C
Terminal Sayısı
6
Nominal Gerilim
1200V
Max Power Dissipation
880W
Ds Breakdown Voltagemin
1200V
Number Of Elements
1

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