IXTM20N60

Specifications

Maximum Gate Source Voltage V

±20

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Eu Rohs

Compliant

Pin Sayısı

3

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

20

Maximum Drain Source Voltage V

600

Pcb Changed

2

Configuration

Single

Maximum Drain Source Resistance Mohm

350@10V

Typical Gate Charge Vgs Nc

150@10V

Typical Fall Time Ns

40

Typical Gate Charge10v Nc

150

Number Of Elements Per Chip

1

Typical Rise Time Ns

43

Maximum Power Dissipation Mw

300000

Maximum Continuous Drain Current A

20

Automotive

No

Supplier Package

TO-204AE

Typical Turnoff Delay Time Ns

70

Typical Input Capacitance Vds Pf

4500@25V

Channel Type

N

Channel Mode

Enhancement

Material

Si

Minimum Operating Temperature C

-55

Maximum Operating Temperature C

150

RoHS

Compliant

Parça Durumu

Obsolete

Package Width

26.66(Max)

Package Height

11.4(Max)

Package Length

39.12(Max)