IXTB1909

Specifications

Configuration

Single

Maximum Gate Source Voltage V

±20

Maximum Power Dissipation Mw

1250000

Channel Mode

Enhancement

Maximum Gate Threshold Voltage V

3.5

Maximum Continuous Drain Current A

100

Typical Turnon Delay Time Ns

49

Typical Gate Charge Vgs Nc

310@10V

Automotive

No

Ürün Durumu

Active

Process Technology

PolarHV

Maximum Idss Ua

50

Typical Turnoff Delay Time Ns

91

Maximum Drain Source Resistance Mohm

49@10V

Parça Durumu

Custom

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

500

Maximum Gate Source Leakage Current Na

200

Eccn Us

EAR99

Typical Gate Charge10v Nc

310

Channel Type

N

Eu Rohs

Compliant

Typical Fall Time Ns

35

Maximum Operating Temperature C

150

Category

Power MOSFET

Seri

*

Typical Input Capacitance Vds Pf

21@25V

Minimum Operating Temperature C

-55

Typical Rise Time Ns

200

Ppap

No