IXFT60N65X2HVTRL

Specifications

Maximum Gate Source Voltage V

±30

Parça Durumu

Acquired

Typical Turnoff Delay Time Ns

63

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

6300@25V

Maximum Power Dissipation Mw

780000

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

108

Maximum Drain Source Voltage V

650

Eccn Us

EAR99

Category

Power MOSFET

Minimum Operating Temperature C

-55

Channel Type

N

Eu Rohs

Compliant

Typical Fall Time Ns

12

Typical Turnon Delay Time Ns

30

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

60

Typical Gate Charge Vgs Nc

108@10V

Typical Rise Time Ns

23

Maximum Drain Source Resistance Mohm

52@10V