IXFR12N100F

Specifications

Additional Feature

AVALANCHE RATED

Yüzey Montaj

NO

Supplier Package

ISOPLUS 247

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Channel Type

N

Process Technology

HiperFET

Eu Rohs

Compliant

Risk Rank

5.71

Terminal Formu

THROUGH-HOLE

Tab

Tab

Typical Rise Time Ns

9.8

Package Length

16.13(Max)

Automotive

No

Drain Currentmax Id

10 A

Rohs Code

Yes

Standard Package Name

SOP

Package Shape

RECTANGULAR

Typical Turnoff Delay Time Ns

31

Ds Breakdown Voltagemin

1000 V

Ppap

No

Typical Gate Charge10v Nc

77

Jesd30 Code

R-PSIP-T3

Operating Mode

ENHANCEMENT MODE

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

77@10V

Maximum Drain Source Resistance Mohm

1050@10V

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Operating Temperaturemax

150 °C

Typical Input Capacitance Vds Pf

2700@25V

Maximum Power Dissipation Mw

250000

Number Of Elements Per Chip

1

Reflow Temperaturemax S

NOT SPECIFIED

Transistor Element Material

SILICON

Part Life Cycle Code

Transferred

Eccn Us

EAR99

Category

Power MOSFET