IXFM6N100

Specifications

Typical Gate Charge10v Nc

88

Number Of Elements Per Chip

1

Ds Breakdown Voltagemin

1000 V

Typical Rise Time Ns

40

Channel Mode

Enhancement

Case Connection

DRAIN

Reflow Temperaturemax S

NOT SPECIFIED

Configuration

Single

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Yüzey Montaj

NO

Maximum Drain Source Voltage V

1000

Minimum Operating Temperature C

-55

Part Life Cycle Code

Obsolete

Process Technology

HiperFET

Drainsource On Resistancemax

2 Ω

Package Shape

ROUND

Kurşunsuz Kodu

Yes

Category

Power MOSFET

Operating Temperaturemax

150 °C

Package Length

39.12(Max)

Pcb Changed

2

Üretici Parça No

IXFM6N100

Channel Type

N

Number Of Elements

1

Automotive

No

Polaritychannel Type

N-CHANNEL

Package Height

9.14(Max)

Package Body Material

METAL

Risk Rank

5.82

Maximum Gate Source Voltage V

±20

Operating Mode

ENHANCEMENT MODE

Supplier Package

TO-204AA

Maximum Operating Temperature C

150

Additional Feature

AVALANCHE RATED

Typical Turnoff Delay Time Ns

100

Pulsed Drain Currentmax Idm

24 A

Rohs Code

Yes

Typical Fall Time Ns

60

Typical Turnon Delay Time Ns

35