IXFM12N100

Specifications

Configuration

Single

Tab

Tab

Parça Durumu

Obsolete

Element Configuration

Single

RoHS

Compliant

Typical Rise Time Ns

33

Channel Mode

Enhancement

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

21

Typical Fall Time Ns

32

Gate To Source Voltage Vgs

20 V

Typical Gate Charge10v Nc

122

Typical Turnoff Delay Time Ns

62

Min. Çalışma Sıcaklığı

-55 °C

Minimum Operating Temperature C

-55

Turn Off Delay Time

62 ns

Process Technology

HDMOS

Eu Rohs

Compliant

Maximum Drain Source Voltage V

1000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

122@10V

Material

Si

Maximum Power Dissipation Mw

300000

Automotive

No

Package Height

11.4(Max)

Continuous Drain Current Id

12 A

Rise Time

33 ns

Channel Type

N

Maximum Drain Source Resistance Mohm

1050@10V

Pcb Changed

2

Mounting

Through Hole

Package Length

30.15 + 9.54(Max)

Category

Power MOSFET

Drain To Source Breakdown Voltage

1 kV

Typical Input Capacitance Vds Pf

4000@25V

Maks. Çalışma Sıcaklığı

150 °C

Supplier Package

TO-204AA

Maximum Operating Temperature C

150

Power Dissipation

300 W

Ppap

No