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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Bulk
- Gate To Source Voltage Vgs
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Chassis Mount
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2004
- Rise Time
- 250ns
- Terminal Pozisyonu
- UPPER
- Terminal Sayısı
- 9
- Rds On Max Id Vgs
- 2.2m Ω @ 500A, 10V
- Fet Feature
- Standard
- Fall Time Typ
- 250 ns
- Montaj
- Chassis Mount, Screw
- Qualification Status
- Not Qualified
- Kurşunsuz
- Lead Free
- Turn Off Delay Time
- 400 ns
- Terminal Formu
- UNSPECIFIED
- Pin Sayısı
- 6
- Temel Parça No
- VMM
- Seri
- HiPerFET™
- Vgsth Max Id
- 4V @ 30mA
- Drain To Source Voltage Vdss
- 100V
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- 100V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Case Connection
- ISOLATED
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Continuous Drain Current Id
- 680A
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PUFM-X9
- Fet Type
- 2 N-Channel (Dual)
- Gate Charge Qg Max Vgs
- 1440nC @ 10V
- Parça Durumu
- Active
- Drainsource On Resistancemax
- 0.0018Ohm
- Kılıf / Paket
- Y3-Li
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