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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Bulk
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Chassis Mount
- Gate To Source Voltage Vgs
- 20V
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2000
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- UPPER
- Terminal Sayısı
- 7
- Rds On Max Id Vgs
- 45m Ω @ 22.5A, 10V
- Input Capacitance Ciss Max Vds
- 7500pF @ 25V
- Rise Time
- 45ns
- Fet Feature
- Standard
- Fall Time Typ
- 45 ns
- Montaj
- Chassis Mount, Screw
- Turn Off Delay Time
- 300 ns
- Radyasyon Dayanımı
- No
- Terminal Formu
- UNSPECIFIED
- Seri
- HiPerFET™
- Vgsth Max Id
- 4V @ 4mA
- Temel Parça No
- VMM
- Pin Sayısı
- 6
- Fabrika Tedarik Süresi
- 24 Weeks
- Case Connection
- ISOLATED
- Drain To Source Voltage Vdss
- 200V
- Max Power Dissipation
- 190W
- Number Of Elements
- 2
- Power Dissipation
- 190W
- Drain To Source Breakdown Voltage
- 200V
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Continuous Drain Current Id
- 45A
- Fet Type
- 2 N-Channel (Dual)
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PUFM-X7
- Pulsed Drain Currentmax Idm
- 180A
- Gate Charge Qg Max Vgs
- 225nC @ 10V
- Element Configuration
- Dual
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