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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e1
- Terminal Formu
- UNSPECIFIED
- Vgsth Max Id
- 4V @ 3mA
- Pin Sayısı
- 7
- Case Connection
- ISOLATED
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Power Dissipation
- 380W
- Drain To Source Breakdown Voltage
- 200V
- Number Of Elements
- 2
- Max Power Dissipation
- 380W
- Drain To Source Voltage Vdss
- 200V
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Continuous Drain Current Id
- 83A
- Fet Type
- 2 N-Channel (Dual)
- RoHS Durumu
- RoHS Compliant
- Configuration
- COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
- Pulsed Drain Currentmax Idm
- 330A
- Gate Charge Qg Max Vgs
- 450nC @ 10V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kılıf / Paket
- TO-240AA
- Pin Sayısı
- 7
- Parça Durumu
- Obsolete
- Ambalaj
- Bulk
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Montaj Tipi
- Chassis Mount
- Kurşunsuz Kodu
- yes
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2000
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 15000pF @ 25V
- Rds On Max Id Vgs
- 25m Ω @ 500mA, 10V
- Terminal Sayısı
- 7
- Terminal Pozisyonu
- UPPER
- Rise Time
- 80ns
- Direnç
- 25MOhm
- Fet Feature
- Standard
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