VMK165-007T

Specifications

Çalışma Sıcaklığı

-40°C~150°C TJ

Power Dissipation

390W

Max Power Dissipation

390W

Case Connection

ISOLATED

Maximum Drain Source Resistance Mohm

7@10V

Typical Turnoff Delay Time Ns

390

Kılıf / Paket

TO-240AA

Gate Charge Qg Max Vgs

480nC @ 10V

Pulsed Drain Currentmax Idm

660A

Minimum Operating Temperature C

-40

Continuous Drain Current Id

165A

Maximum Operating Temperature C

150

Rise Time

280ns

Supplier Package

TO-240AA

Input Capacitance Ciss Max Vds

8800pF @ 25V

Terminal Pozisyonu

UPPER

Maximum Power Dissipation Mw

390000

Eu Rohs

Compliant with Exemption

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Maximum Gate Source Voltage V

±20

Svhc

Yes

Operating Junction Temperature C

150

Montaj Tipi

Chassis Mount

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Bulk

Category

Power MOSFET

Package Length

92

Typical Turnon Delay Time Ns

120

Qualification Status

Not Qualified

Mounting

Screw

Typical Gate Charge10v Nc

480

Fall Time Typ

110 ns

Package Height

30

Drain To Source Voltage Vdss

70V

Number Of Elements

2

Drain To Source Breakdown Voltage

70V