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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 15
- Channel Type
- N
- Jesd30 Code
- R-XUFM-X15
- Montaj
- Through Hole
- Maximum Power Dissipation Mw
- 300000
- Eu Rohs
- Supplier Unconfirmed
- Typical Turnoff Delay Time Ns
- 80
- Kurşunsuz Kodu
- yes
- Continuous Drain Current Id
- 75A
- Maximum Continuous Drain Current A
- 75
- Fet Type
- 4 N-Channel (H-Bridge)
- Seri
- HiPerFET™
- Montaj Tipi
- Through Hole
- Case Connection
- ISOLATED
- Rds On Max Id Vgs
- 25m Ω @ 500mA, 10V
- Hts
- 8541.29.00.95
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 12 Weeks
- Yayın Yılı
- 2005
- Typical Gate Charge Vgs Nc
- 180@10V
- Number Of Elements Per Chip
- 4
- Category
- Power MOSFET
- Eccn Us
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Ds Breakdown Voltagemin
- 100V
- Typical Rise Time Ns
- 60
- Transistor Element Material
- SILICON
- Parça Durumu
- Not For New Designs
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 260nC @ 10V
- Mounting
- Screw
- Qualification Status
- Not Qualified
- Maximum Gate Source Voltage V
- ±20
- Ambalaj
- Bulk
- Maximum Drain Source Resistance Mohm
- 25@10V
- Pcb Changed
- 13
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Additional Feature
- HIGH RELIABILITY
- Number Of Elements
- 4
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