VKM40-06P1

Specifications

Maximum Drain Source Voltage V

600

Package Width

34.3

Typical Turnon Delay Time Ns

30

Configuration

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Process Technology

CoolMOS

Kılıf / Paket

ECO-PAC2

Typical Gate Charge10v Nc

220

Ambalaj

Bulk

Maximum Drain Source Resistance Mohm

70@10V

Number Of Elements

4

Pcb Changed

15

Çalışma Sıcaklığı

-40°C~150°C TJ

Fet Feature

Standard

Minimum Operating Temperature C

-40

Package Length

51

Typical Fall Time Ns

10

Vgsth Max Id

5.5V @ 3mA

Terminal Pozisyonu

UPPER

Package Height

9

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Automotive

No

Terminal Formu

UNSPECIFIED

Pin Sayısı

6

Supplier Package

ECO-PAC 2

Pin Sayısı

15

Ppap

No

Drain To Source Voltage Vdss

600V

Drainsource On Resistancemax

0.07Ohm

Transistor Application

SWITCHING

Channel Mode

Enhancement

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Maximum Operating Temperature C

150

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

1800 mJ

Continuous Drain Current Id

38A

Maximum Continuous Drain Current A

38

Fet Type

4 N-Channel (H-Bridge)

Montaj Tipi

Chassis Mount

Case Connection

ISOLATED