MWI50-12E7

Specifications

Terminal Sayısı

11

Voltage Collector Emitter Breakdown Max

1200V

Transistor Element Material

SILICON

Transistor Application

POWER CONTROL

Çalışma Sıcaklığı

-40°C~125°C TJ

Turn Off Timenom Toff

710 ns

Terminal Formu

PIN/PEG

Collectoremitter Breakdown Voltage

1.2kV

Configuration

Three Phase Inverter

Vceon Max Vge Ic

2.4V @ 15V, 50A

Ntc Thermistor

No

Collector Emitter Voltage Vceo

2.4V

JESD-609 Kodu

e3

Current Collector Cutoff Max

800μA

Terminal Kaplaması

Tin (Sn) - with Nickel (Ni) barrier

Terminal Pozisyonu

UPPER

Yayın Yılı

2007

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Cies Vce

3.8nF @ 25V

Polaritychannel Type

N-CHANNEL

Jesd30 Code

R-XUFM-P11

Montaj

Chassis Mount

Parça Durumu

Obsolete

Input

Standard

Pin Sayısı

2

RoHS Durumu

RoHS Compliant

Max Collector Current

90A

Power Max

350W

Turn On Time

130 ns

Number Of Elements

6

Additional Feature

UL REGONIZED

Fabrika Tedarik Süresi

26 Weeks

Igbt Type

NPT

Temel Parça No

MWI

Input Capacitance

3.8nF

Max Power Dissipation

350W

Kılıf / Paket

E2

Case Connection

ISOLATED

Montaj Tipi

Chassis Mount

Pin Sayısı

17