MWI50-12A7

Specifications

Kılıf / Paket

E2

Max Power Dissipation

350W

Igbt Type

NPT

Additional Feature

UL RECOGNIZED

Turn On Time

170 ns

Supplier Package

E2

Pin Sayısı

2

Max Collector Current

85A

Eccn Us

EAR99

Montaj

Chassis Mount

Input

Standard

Parça Durumu

Active

Pcb Changed

18

Typical Collector Emitter Saturation Voltage V

2.2

Package Width

45

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Cies Vce

3.3nF @ 25V

Terminal Pozisyonu

UPPER

JESD-609 Kodu

e3

Package Height

17

Collector Emitter Voltage Vceo

2.7V

Ntc Thermistor

No

Maximum Power Dissipation Mw

350

Collectoremitter Breakdown Voltage

1.2kV

Transistor Application

POWER CONTROL

Maximum Gate Emitter Voltage V

±20

Terminal Formu

UNSPECIFIED

Maximum Gate Emitter Leakage Current Ua

0.2

Automotive

No

Voltage Collector Emitter Breakdown Max

1200V

Transistor Element Material

SILICON

Minimum Operating Temperature C

-40

Terminal Sayısı

11

Maximum Collectoremitter Voltage V

1200

Case Connection

ISOLATED

Mounting

Screw

Montaj Tipi

Chassis Mount

Pin Sayısı

17

Input Capacitance

3.3nF

Temel Parça No

MWI