MWI150-12T8T

Specifications

Maximum Power Dissipation Mw

690

Ntc Thermistor

Yes

Collector Emitter Voltage Vceo

2.1V

Package Height

17

Terminal Pozisyonu

UPPER

Maximum Collectoremitter Voltage V

1200

Terminal Sayısı

13

Minimum Operating Temperature C

-40

Automotive

No

Transistor Element Material

SILICON

Voltage Collector Emitter Breakdown Max

1200V

Terminal Formu

UNSPECIFIED

Maximum Gate Emitter Leakage Current Ua

0.5

Maximum Gate Emitter Voltage V

±20

Transistor Application

POWER CONTROL

Collectoremitter Breakdown Voltage

1.2kV

Max Collector Current

215A

Gateemitter Voltagemax

20V

Supplier Package

E3

Pin Sayısı

3

Turn On Time

320 ns

Additional Feature

UL RECOGNIZED

Igbt Type

Trench

Kurşunsuz

Lead Free

Max Power Dissipation

690W

Kılıf / Paket

E3

Input Capacitance Cies Vce

10.77nF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

MWI150

Package Width

62

Pcb Changed

35

Typical Collector Emitter Saturation Voltage V

1.7

Parça Durumu

Active

Input

Standard

Eccn Us

EAR99

Montaj

Chassis Mount

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

2.1V @ 15V, 150A

Ambalaj

Box

Current Collector Cutoff Max

6mA