MWI100-12E8

Specifications

Collectoremitter Breakdown Voltage

1.2kV

Configuration

Three Phase Inverter

Çalışma Sıcaklığı

-40°C~125°C TJ

Transistor Application

POWER CONTROL

Turn Off Timenom Toff

795 ns

Terminal Formu

UNSPECIFIED

Voltage Collector Emitter Breakdown Max

1200V

Transistor Element Material

SILICON

Terminal Sayısı

11

Terminal Pozisyonu

UPPER

Current Collector Cutoff Max

1.4mA

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn) - with Nickel (Ni) barrier

Collector Emitter Voltage Vceo

2.5V

Ambalaj

Bulk

Ntc Thermistor

No

Vceon Max Vge Ic

2.5V @ 15V, 100A

Montaj

Chassis Mount

Jesd30 Code

R-XUFM-X11

Parça Durumu

Obsolete

Input

Standard

Polaritychannel Type

N-CHANNEL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2007

Input Capacitance Cies Vce

7.4nF @ 25V

Case Connection

ISOLATED

Max Power Dissipation

640W

Kılıf / Paket

E3

Montaj Tipi

Chassis Mount

Pin Sayısı

19

Igbt Type

NPT

Temel Parça No

MWI

Input Capacitance

7.4nF

Power Max

640W

Turn On Time

345 ns

Number Of Elements

6

Additional Feature

UL RECOGNIZED

Gateemitter Voltagemax

20V

RoHS Durumu

RoHS Compliant

Pin Sayısı

3