Volume pricing
- 1+ pcs$21.68
- 10+ pcs$20.46
- 100+ pcs$19.30
- 500+ pcs$18.21
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Power Max
- 400W
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Collector Emitter Voltage Vceo
- 1.8V
- Turn On Time
- 92 ns
- Max Collector Current
- 105A
- Fabrika Tedarik Süresi
- 10 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge
- 143nC
- Test Conditions
- 360V, 70A, 2 Ω, 15V
- Current Collector Pulsed Icm
- 440A
- Temel Parça No
- IXX*N60
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2012
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Reverse Recovery Time
- 140 ns
- Number Of Elements
- 1
- Case Connection
- ISOLATED
- Collectoremitter Breakdown Voltage
- 600V
- Seri
- GenX3™, XPT™
- Vceon Max Vge Ic
- 1.8V @ 15V, 70A
- Giriş Tipi
- Standard
- Td Onoff25c
- 30ns/120ns
- Gateemitter Voltagemax
- 20V
- Terminal Sayısı
- 21
- Kılıf / Paket
- 24-PowerSMD, 21 Leads
- Currentcollector Ic Max
- 145A
- Terminal Pozisyonu
- DUAL
- Max Power Dissipation
- 250W
- Additional Feature
- AVALANCHE RATED
- Switching Energy
- 1.9mJ (on), 2mJ (off)
- Turn Off Timenom Toff
- 350 ns
- Gateemitter Thr Voltagemax
- 5.5V
- Transistor Application
- POWER CONTROL
- Ambalaj
- Tube
- Montaj Tipi
- Surface Mount
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Jesd30 Code
- R-PDSO-G21
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