Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Power Dissipationmax Abs
- 1000W
- Power Max
- 1000W
- Kurşunsuz Kodu
- yes
- Maximum Collectoremitter Voltage V
- 600
- Minimum Operating Temperature C
- -55
- Eu Rohs
- Compliant
- Yayın Yılı
- 2011
- Maximum Gate Emitter Leakage Current Ua
- 0.4
- Maximum Power Dissipation Mw
- 1000
- Current Collector Pulsed Icm
- 1000A
- RoHS Durumu
- RoHS Compliant
- Gate Charge
- 585nC
- Test Conditions
- 480V, 100A, 1 Ω, 15V
- Channel Type
- N
- Fabrika Tedarik Süresi
- 30 Weeks
- Yüzey Montaj
- YES
- Package Height
- 5.55(Max)
- Gateemitter Voltagemax
- 20V
- Giriş Tipi
- Standard
- Case Connection
- ISOLATED
- Typical Collector Emitter Saturation Voltage V
- 1.67
- Polaritychannel Type
- N-CHANNEL
- Terminal Formu
- GULL WING
- Montaj Tipi
- Surface Mount
- Switching Energy
- 2.7mJ (on), 5mJ (off)
- Additional Feature
- LOW CONDUCTION LOSS
- Pin Sayısı
- 21
- Maximum Continuous Collector Current A
- 400
- Pcb Changed
- 21
- Voltage Collector Emitter Breakdown Max
- 600V
- Turn On Time
- 107 ns
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Configuration
- SINGLE
- Ppap
- No
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Montaj Stili
- SMD/SMT
- Maximum Operating Temperature C
- 150
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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