MIEB101W1200EH

Specifications

Collectoremitter Saturation Voltage

1.8 V

Case Connection

ISOLATED

Configuration

Three Phase Inverter

Montaj Tipi

Chassis Mount

Maximum Collectoremitter Voltage V

1200

Input

Standard

Input Capacitance Cies Vce

7.43nF @ 25V

Minimum Operating Temperature C

-40

Transistor Element Material

SILICON

Max Collector Current

183A

Collectoremitter Breakdown Voltage

1.2kV

Kılıf / Paket

E3

Vceon Max Vge Ic

2.2V @ 15V, 100A

Maks. Çalışma Sıcaklığı

+ 125 C

Turn On Time

175 ns

Turn Off Timenom Toff

700 ns

Channel Type

N

Eccn Us

EAR99

Number Of Elements

6

Automotive

No

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

N-CHANNEL

Terminal Sayısı

19

Continuous Collector Current At25 C

183 A

Input Capacitance

7.43nF

Maximum Operating Temperature C

150

Additional Feature

UL RECOGNIZED

Voltage Collector Emitter Breakdown Max

1200V

Gateemitter Voltagemax

20V

Minimum Operating Temperature

- 40 C

Parça Durumu

Active

Pd Power Dissipation

630 W

Maximum Gate Emitter Voltage V

±20

Ntc Thermistor

No

Typical Collector Emitter Saturation Voltage V

1.8

Collector Emitter Voltage Vceo Max

1.2 kV

Max Power Dissipation

630W

Eu Rohs

Compliant

Maximum Continuous Collector Current A

183

Montaj Stili

Chassis Mount