Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 1.2kV
- Voltage Collector Emitter Breakdown Max
- 1200V
- Input Capacitance
- 6.6nF
- Yükseklik
- 30mm
- Terminal Pozisyonu
- UPPER
- Power Max
- 760W
- Additional Feature
- UL RECOGNIZED
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Formu
- UNSPECIFIED
- Kurşunsuz Kodu
- yes
- Transistor Application
- POWER CONTROL
- Number Of Elements
- 1
- Genişlik
- 62mm
- Turn Off Timenom Toff
- 570 ns
- Polaritychannel Type
- N-CHANNEL
- Vcesatmax
- 3 V
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 5
- Current Collector Cutoff Max
- 7.5mA
- Ambalaj
- Bulk
- Vceon Max Vge Ic
- 2.7V @ 15V, 100A
- Pin Sayısı
- 7
- Fabrika Tedarik Süresi
- 32 Weeks
- Turn On Time
- 170 ns
- Max Power Dissipation
- 760W
- Input Capacitance Cies Vce
- 6.6nF @ 25V
- Max Collector Current
- 180A
- Transistor Element Material
- SILICON
- Collectoremitter Breakdown Voltage
- 1.2kV
- Yayın Yılı
- 2000
- Montaj
- Chassis Mount, Screw
- Kılıf / Paket
- Y3-DCB
- Uzunluk
- 110mm
- Igbt Type
- NPT
- Pin Sayısı
- 5
- Input
- Standard
- Ntc Thermistor
- No
- Collectoremitter Saturation Voltage
- 1.2kV
- Gateemitter Voltagemax
- 20V
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