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IXYS

IXYP20N65B3D1

Single IGBTs

In StockRoHS: Compliant

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Genuine parts

Verified sourcing

RoHS

Compliant

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Specifications

Montaj Tipi
Through Hole
Collectoremitter Saturation Voltage
1.77 V
Minimum Operating Temperature
- 55 C
Eu Rohs
Compliant
Pd Power Dissipation
230 W
Parça Durumu
Active
Igbt Type
PT
Ppap
No
Td Onoff25c
12ns/103ns
Hts
8542.39.00.01
Çalışma Sıcaklığı
-55°C~175°C TJ
Vceon Max Vge Ic
2.1V @ 15V, 20A
Voltage Collector Emitter Breakdown Max
650V
Maks. Çalışma Sıcaklığı
+ 175 C
Currentcollector Ic Max
58A
Automotive
No
REACH Uyumluluk Kodu
compliant
Kılıf / Paket
TO-220-3
Power Max
230W
Gate Charge
29nC
Fabrika Tedarik Süresi
24 Weeks
Giriş Tipi
Standard
Seri
XPT™, GenX3™
Technology
Si
Maximum Gate Emitter Voltage
- 20 V, + 20 V
Switching Energy
500μJ (on), 450μJ (off)
Current Collector Pulsed Icm
108A
Continuous Collector Current At25 C
58 A
Montaj Stili
Through Hole
Test Conditions
400V, 20A, 20 Ω, 15V
Reverse Recovery Time
25ns
Configuration
Single
Collector Emitter Voltage Vceo Max
650 V

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