Volume pricing
- 1+ pcs$9.08
- 10+ pcs$8.57
- 100+ pcs$8.08
- 500+ pcs$7.63
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Through Hole
- Collectoremitter Saturation Voltage
- 1.35 V
- Minimum Operating Temperature
- - 55 C
- Pd Power Dissipation
- 830 W
- Igbt Type
- PT
- Td Onoff25c
- 45ns/370ns
- Vceon Max Vge Ic
- 1.35V @ 15V, 75A
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Voltage Collector Emitter Breakdown Max
- 650 V
- Maks. Çalışma Sıcaklığı
- + 175 C
- Currentcollector Ic Max
- 290 A
- Paket
- Tube
- Kılıf / Paket
- TO-247-3
- Gate Charge
- 314 nC
- Power Max
- 830 W
- Giriş Tipi
- Standard
- Tedarikçi Cihaz Paketi
- TO-247 (IXTH)
- Technology
- Si
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Switching Energy
- 1.25mJ (on), 3.2mJ (off)
- Ambalaj
- Tube
- Tradename
- XPT
- RoHS
- Details
- Fabrika Paket Adedi
- 30
- Continuous Collector Current At25 C
- 290 A
- Current Collector Pulsed Icm
- 790 A
- Montaj Stili
- Through Hole
- Test Conditions
- 400V, 60A, 3Ohm, 15V
- Collector Emitter Voltage Vceo Max
- 650 V
- Configuration
- Single
- Ürün Tipi
- IGBT Transistors
- Ürün Durumu
- Active
- Continuous Collector Current Ic Max
- 790 A
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