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IXXR110N65B4H1

IXYS

IXXR110N65B4H1

Single IGBTs

RoHS: Compliant

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Compliant

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Specifications

Collectoremitter Breakdown Voltage
650V
Igbt Type
PT
Parça Durumu
Active
Td Onoff25c
38ns/156ns
Montaj Tipi
Through Hole
Collectoremitter Saturation Voltage
1.75V
Element Configuration
Single
Vceon Max Vge Ic
2.2V @ 15V, 110A
Çalışma Sıcaklığı
-55°C~175°C TJ
Montaj
Through Hole
Switching Energy
2.2mJ (on), 1.05mJ (off)
Seri
GenX4™, XPT™
Collector Emitter Voltage Vceo
2.2V
Ambalaj
Tube
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
TO-247-3
Giriş Tipi
Standard
Gate Charge
183nC
Fabrika Tedarik Süresi
14 Weeks
RoHS Durumu
ROHS3 Compliant
Reverse Recovery Time
100ns
Test Conditions
400V, 55A, 2 Ω, 15V
Max Collector Current
150A
Max Power Dissipation
455W
Yayın Yılı
2013
Power Dissipation
455W
Temel Parça No
110N65
Current Collector Pulsed Icm
460A

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