IXXH100N60C3

Specifications

Terminal Pozisyonu

SINGLE

Pcb Changed

3

Tab

Tab

Package Width

5.3(Max)

Gateemitter Thr Voltagemax

5.5V

Automotive

No

Typical Collector Emitter Saturation Voltage V

1.68

Transistor Element Material

SILICON

Mounting

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

Td Onoff25c

30ns/90ns

Ppap

No

Collectoremitter Breakdown Voltage

600V

Package Length

16.26(Max)

Eu Rohs

Compliant with Exemption

Number Of Elements

1

Collectoremitter Saturation Voltage

2.2V

Maximum Gate Emitter Voltage V

±20

Max Power Dissipation

830W

Svhc

Yes

RoHS Durumu

ROHS3 Compliant

Max Collector Current

190A

Current Collector Pulsed Icm

380A

Power Dissipation

830W

Channel Type

N

Ambalaj

Tube

Collector Emitter Voltage Vceo

2.2V

Switching Energy

2mJ (on), 950μJ (off)

Seri

GenX3™, XPT™

Polaritychannel Type

N-CHANNEL

Maximum Power Dissipation Mw

830

Gate Charge

150nC

Kılıf / Paket

TO-247-3

Minimum Operating Temperature C

-55

Transistor Application

POWER CONTROL

Supplier Package

TO-247AD

Gateemitter Voltagemax

20V

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Terminal Sayısı

3