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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 600W
- Gate Charge
- 70nC
- Polaritychannel Type
- N-CHANNEL
- Maximum Power Dissipation Mw
- 600
- Transistor Application
- POWER CONTROL
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Minimum Operating Temperature C
- -55
- JESD-609 Kodu
- e3
- Collector Emitter Voltage Vceo
- 600V
- Seri
- XPT™, GenX3™
- Switching Energy
- 670μJ (on), 1.2mJ (off)
- Current Collector Pulsed Icm
- 200A
- Montaj Stili
- SMD/SMT
- Channel Type
- N
- Reverse Recovery Time
- 40ns
- Max Collector Current
- 120A
- Collector Emitter Voltage Vceo Max
- 600 V
- RoHS Durumu
- RoHS Compliant
- Radyasyon Dayanımı
- No
- Number Of Elements
- 1
- Collectoremitter Saturation Voltage
- 1.55 V
- Maximum Gate Emitter Voltage V
- ±20
- Ppap
- No
- Td Onoff25c
- 27ns/150ns
- Pd Power Dissipation
- 600 W
- Package Length
- 10.29(Max)
- Eu Rohs
- Compliant
- Pin Sayısı
- 3
- Typical Collector Emitter Saturation Voltage V
- 1.55
- Transistor Element Material
- SILICON
- Power Dissipationmax Abs
- 600W
- Maks. Çalışma Sıcaklığı
- + 175 C
- Case Connection
- COLLECTOR
- Terminal Formu
- GULL WING
- Mounting
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Package Width
- 9.65(Max)
- Gateemitter Thr Voltagemax
- 5.5V
- Tab
- Tab
- Pcb Changed
- 2
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