IXXA50N60B3

Specifications

Power Max

600W

Gate Charge

70nC

Polaritychannel Type

N-CHANNEL

Maximum Power Dissipation Mw

600

Transistor Application

POWER CONTROL

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Minimum Operating Temperature C

-55

JESD-609 Kodu

e3

Collector Emitter Voltage Vceo

600V

Seri

XPT™, GenX3™

Switching Energy

670μJ (on), 1.2mJ (off)

Current Collector Pulsed Icm

200A

Montaj Stili

SMD/SMT

Channel Type

N

Reverse Recovery Time

40ns

Max Collector Current

120A

Collector Emitter Voltage Vceo Max

600 V

RoHS Durumu

RoHS Compliant

Radyasyon Dayanımı

No

Number Of Elements

1

Collectoremitter Saturation Voltage

1.55 V

Maximum Gate Emitter Voltage V

±20

Ppap

No

Td Onoff25c

27ns/150ns

Pd Power Dissipation

600 W

Package Length

10.29(Max)

Eu Rohs

Compliant

Pin Sayısı

3

Typical Collector Emitter Saturation Voltage V

1.55

Transistor Element Material

SILICON

Power Dissipationmax Abs

600W

Maks. Çalışma Sıcaklığı

+ 175 C

Case Connection

COLLECTOR

Terminal Formu

GULL WING

Mounting

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Package Width

9.65(Max)

Gateemitter Thr Voltagemax

5.5V

Tab

Tab

Pcb Changed

2