IXTY48P05T

Specifications

Gate Charge Qg Max Vgs

53nC @ 10V

Qualification Status

Not Qualified

Pin Sayısı

4

Current Continuous Drain Id25

48A Tc

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-252AA

Transistor Polarity

P-Channel

Yayın Yılı

2013

Vds Drainsource Breakdown Voltage

50 V

Maximum Drain Source Resistance Mohm

30@10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

50V

Package Height

2.4(Max)

Fabrika Tedarik Süresi

17 Weeks

Id Continuous Drain Current

48 A

Operating Mode

ENHANCEMENT MODE

Fet Type

P-Channel

Technology

Si

Rds On Drainsource Resistance

30 mOhms

Drain To Source Voltage Vdss

50V

Hts

8541.29.00.95

Vgsth Max Id

4.5V @ 250μA

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Category

Power MOSFET

Supplier Package

DPAK

Vgs Gatesource Voltage

- 15 V, + 15 V

Vgs Th Gatesource Threshold Voltage

4.5 V

Eccn Us

EAR99

Montaj Tipi

Surface Mount

Typical Fall Time Ns

13

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature C

150

Number Of Channels

1 Channel

Typical Rise Time Ns

15

Parça Durumu

Active

Qg Gate Charge

53 nC

Drive Voltage Max Rds On Min Rds On

10V