IXTY26P10T

Specifications

Mounting

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Gate Source Voltage V

±15

Terminal Formu

GULL WING

Continuous Drain Current Id

26A

Maximum Gate Source Leakage Current Na

50

Case Connection

DRAIN

Typical Turnon Delay Time Ns

20

Transistor Element Material

SILICON

Automotive

No

Channel Mode

Enhancement

Maximum Drain Source Voltage V

100

Typical Input Capacitance Vds Pf

3820@25V

Terminal Pozisyonu

SINGLE

Pcb Changed

2

Typical Gate Charge Vgs Nc

52@10V

Number Of Elements Per Chip

1

Tab

Tab

Input Capacitance Ciss Max Vds

3820pF @ 25V

Package Width

6.22(Max)

Number Of Elements

1

Rds On Max Id Vgs

90m Ω @ 13A, 10V

Pulsed Drain Currentmax Idm

80A

Eu Rohs

Compliant with Exemption

Package Length

6.73(Max)

Vgs Max

±15V

Additional Feature

AVALANCHE RATED

Ppap

No

Power Dissipation

150W

Channel Type

P

Drainsource On Resistancemax

0.09Ohm

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Typical Turnoff Delay Time Ns

37

Maximum Idss Ua

10

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Maximum Gate Threshold Voltage V

4.5

Transistor Application

SWITCHING