IXTY08N50D2

Specifications

Typical Turnon Delay Time Ns

28

Transistor Element Material

SILICON

Case Connection

DRAIN

Continuous Drain Current Id

800mA

Maximum Gate Source Voltage V

±20

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Mounting

Surface Mount

Package Width

6.22(Max)

Input Capacitance Ciss Max Vds

312pF @ 25V

Tab

Tab

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

12.7@5V

Terminal Pozisyonu

SINGLE

Pcb Changed

2

Maximum Drain Source Voltage V

500

Typical Input Capacitance Vds Pf

312@25V

Automotive

No

Channel Mode

Enhancement

Rds On Max Id Vgs

4.6 Ω @ 400mA, 0V

Number Of Elements

1

Ppap

No

Vgs Max

±20V

Package Length

6.73(Max)

Eu Rohs

Compliant

Pin Sayısı

3

Channel Type

N

Power Dissipation

60W

Typical Turnoff Delay Time Ns

35

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Maximum Power Dissipation Mw

60000

Transistor Application

AMPLIFIER

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Minimum Operating Temperature C

-55

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

0.8(Min)

Ambalaj

Tube

JESD-609 Kodu

e3