IXTY02N120P

Specifications

Id Continuous Drain Current

200 mA

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

24 Weeks

Maximum Drain Source Resistance Mohm

75000@10V

Package Height

2.4(Max)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vds Drainsource Breakdown Voltage

1.2 kV

Fet Type

N-Channel

Technology

Si

Rds On Drainsource Resistance

75 Ohms

Drain To Source Voltage Vdss

1200V

Current Continuous Drain Id25

200mA Tc

Pin Sayısı

4

Gate Charge Qg Max Vgs

4.7nC @ 10V

Transistor Polarity

N-Channel

Yayın Yılı

2004

Configuration

Single

ECCN Kodu

EAR99

Typical Fall Time Ns

39

Minimum Operating Temperature

- 55 C

Number Of Channels

1 Channel

Typical Rise Time Ns

10

Maximum Operating Temperature C

150

Montaj Tipi

Surface Mount

Vgs Gatesource Voltage

- 20 V, + 20 V

Eccn Us

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Surface Mount

Category

Power MOSFET

Terminal Sayısı

2

Vgsth Max Id

4V @ 100μA

Hts

8541.29.00.95

Element Configuration

Single

Avalanche Energy Rating Eas

40 mJ

Supplier Package

DPAK

Maximum Power Dissipation Mw

33000

Drain Currentmax Abs Id

0.2A