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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- TO-247-3
- Fabrika Tedarik Süresi
- 28 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Seri
- Linear L2™
- Drain To Source Breakdown Voltage
- 250V
- Fet Type
- N-Channel
- Power Dissipation Max
- 960W Tc
- Kurşunsuz Kodu
- yes
- JESD-609 Kodu
- e1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Ambalaj
- Tube
- Reach Svhc
- No SVHC
- Qualification Status
- Not Qualified
- Gate Charge Qg Max Vgs
- 640nC @ 10V
- Power Dissipation
- 960W
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 90A Tc
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2008
- Montaj Tipi
- Through Hole
- Direnç
- 33mOhm
- Rds On Max Id Vgs
- 33m Ω @ 45A, 10V
- Number Of Elements
- 1
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Additional Feature
- AVALANCHE RATED
- Vgs Max
- ±20V
- Vgsth Max Id
- 4.5V @ 3mA
- Nominal Vgs
- 2 V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 90A
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